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[International Journal] A Separate Extraction Method for Asymmetric Source and Drain Resistances Using Frequency-Dispersive C-V Characteristics in Exfoliated MoS2 FET
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Hagyoul Bae, Choong-Ki Kim, Seung-Bae Jeon, Gwang Hyuk Shin, Eung Taek Kim, Jeong-Gyu Song, Youngjun

Electron Device Letters, February , 2016


vol 37, no 2, pp 231-233

 Asymmetric source and drain (S/D) series resistances (RS and RD) are unavoidable in exfoliated MoS2 field effect transistors (EM-FETs). Through combining the capacitance-voltage (C-V) and current-voltage (I-V) characteristics, the asymmetric RS and RD are extracted separately. First, the frequency-dispersive C-V characteristics are analyzed in a frequency range of 0.3‒10 kHz. Second, the intrinsic RS and RD (RS,int and RD,int) are characterized through de-embedding the parasitic pad capacitances (CPad=CS,Pad+CD,Pad) between the S/D metal and the bottom gate (G) in an overlapped region with consideration of the structure-dependent parameters in the EM-FET. The proposed methodology is verified through comparison with the well-known channel resistance method (CRM), which is based on only the ID-VD characteristics in the linear region. Finally, RS,int and RD,int at various parasitic overlap areas are extracted separately with improved accuracy.